dual n-channel 2.5v specified powertrench mosfet.
* 6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V
* ESD protection diode (note 3)
* High performance trench technology for extremely .
with a wide range of gate drive voltage (2.5V
– 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal p.
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
– 12V). P.
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